november 2004 ? 2004 fairchild semiconductor corporation FDJ1032C rev b(w) FDJ1032C complementary powertrench ? mosfet general description these n & p-channel mosfets are produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. applications ? dc/dc converter ? load switch ? motor driving features ? q1 ?2.8 a, ?20 v. r ds(on) = 160 m ? @ v gs = ?4.5 v r ds(on) = 230 m ? @ v gs = ?2.5 v r ds(on) = 390 m ? @ v gs = ?1.8 v ? q2 3.2 a, 20 v. r ds(on) = 90 m ? @ v gs = 4.5 v r ds(on) = 130 m ? @ v gs = 2.5 v. ? low gate charge ? high performance trench technology for extremely low r ds(on) . ? flmp sc75 package: enhanced thermal performance in industry-standard package size 3 2 1 4 5 6 bottom drain contact bottom drain contact q2 (n) q1 (p) 3 2 1 4 5 6 bottom drain contact bottom drain contact q2 (n) q1 (p) absolute maximum ratings t a = 25c unless otherwise noted symbol parameter q1 q2 units v dss drain-source voltage ?20 20 v v gss gate-source voltage 8 12 v i d drain current - continuous (note 1a) ?2.8 3.2 a - pulsed ?12 12 p d power dissipation for single operation (note 1a) 1.5 w (note 1b) 0.9 t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 80 c/w r jc thermal resistance, junction-to-case (note 1a) 5 package marking and ordering information device marking device reel size tape width quantity .h FDJ1032C 7?? 8mm 3000 units FDJ1032C s1 s2 g2 g1 s1 s2 s1 s2 g2 g1 s1 s2 sc75 dual flmp
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = ?250 a v gs = 0 v, i d = 250 a q1 q2 ?20 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c i d = 250 a, referenced to 25 c q1 q2 ?13 13 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v v ds = 16 v, v gs = 0 v q1 q2 ?1 1 a i gss gate-body leakage v gs = + 8 v, v ds = 0 v v gs = + 12 v, v ds = 0 v q1 q2 + 100 + 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a v ds = v gs , i d = 250 a q1 q2 ?0.4 0.6 ?0.8 1.0 ?1.5 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c i d = 250 a, referenced to 25 c q1 q2 3 ?3 mv/ c r ds(on) static drain-source on-resistance v gs = ?4.5 v, i d = ?2.8 a v gs = ?2.5 v, i d = ?2.2 a v gs = ?1.8 v, i d = ?1.7 a v gs = ?4.5 v,i d =2.8a,t j =125 c q1 108 163 283 150 160 230 390 238 m ? v gs = 4.5 v, i d = 3.2 a v gs = 2.5 v i d = 2.7 a v gs = 4.5 v, i d = 3.2,t j =125 c q2 70 100 83 90 130 132 g fs forward transconductance v ds = ?5 v, i d = ? 2.8 a v ds = 5 v, i d = 3.2 a q1 q2 5 7.5 s dynamic characteristics c iss input capacitance q1 q2 290 200 pf c oss output capacitance q1 q2 55 50 pf c rss reverse transfer capacitance q1: v ds = ?10 v, v gs = 0 v, f = 1.0 mhz q2: v ds = 10 v, v gs = 0 v, f = 1.0 mhz q1 q2 29 30 pf r g gate resistance v gs = 15mv, f = 1.0 mhz q1 18 ? q2 10 switching characteristics t d(on) turn-on delay time q1 q2 8 7 16 14 ns t r turn-on rise time q1 q2 13 8 23 16 ns t d(off) turn-off delay time q1 q2 13 11 23 20 ns t f turn-off fall time q1: v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? q2: v dd = 10 v, i d = 1 a, v gs = 4.5v, r gen = 6 ? q1 q2 18 2 32 4 ns q g total gate charge q1 q2 3 2 4 3 nc q gs gate-source charge q1 q2 0.65 0.4 nc q gd gate-drain charge q1: v ds = ?10 v,i d = ?2.8 a,v gs = ?4.5v q2: v ds = 10 v, i d = 3.2 a,v gs = 4.5 v q1 q2 0.75 1.0 nc FDJ1032C
electrical characteristics (continued) t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q1 q2 ?1.25 1.25 a v sd drain-source diode forward voltage v gs = 0 v, i s = ?1.3 a (note 2) v gs = 0 v, i s = 1.3 a (note 2) q1 q2 ?0.8 0.8 ?1.2 1.2 v t rr diode reverse recovery time i f = ? 4.2a,d if /d t = 100 a/ s i f = 5.9a, d if /d t = 100 a/ s q1 q2 14 11 ns q rr diode reverse recovery charge i f = ? 4.2a,d if /d t = 100 a/ s i f = 5.9a, d if /d t = 100 a/ s q1 q2 4 2.5 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 80c/w when mounted on a 1in 2 pad of 2 oz copper (single operation). b) 140c/w when mounted on a minimum pad of 2 oz copper (single operation). scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDJ1032C
typical characteristics : q1 0 2 4 6 8 10 012345 -v ds , drain to source voltage (v) -i d , drain current (a) v gs =-4.5v -3.0v -3.5v -1.8v -2.5v -2.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0246810 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs =-1.8v -3.0v -3.5v -4.5v -4.0v -2.5v -2.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -2.8a v gs = -4.5v 0.08 0.14 0.2 0.26 0.32 0.38 0.44 0.5 1.522.533.544.55 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -1.4a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 1 2 3 4 5 0.511.522.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 00.20.40.60.811.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs =0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDJ1032C
typical characteristics : q1 0 1 2 3 4 5 00.511.522.533.5 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -2.8a v ds = -5v -10v -15v 0 100 200 300 400 500 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 s r ds(on) limit v gs = -4.5v single pulse r ja = 140 o c/w t a = 25 o c 10ms 1ms 10s 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 140c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. FDJ1032C
typical characteristics : q2 0 2 4 6 8 10 12 00.511.522.53 v ds , drain-source voltage (v) i d , drain current (a) 3.0v 2.5v 3.5v v gs = 4.5v 2.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 024681012 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 4.0v 3.5v 3.0v 4.5v figure 11. on-region characteristics. fi gure 12. on-resistance variation with drain current and gate voltage. 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 3.2a v gs = 4.5v 0.04 0.08 0.12 0.16 0.2 0.24 0.28 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 1.6a t a = 125 o c t a = 25 o c figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage. 0 2 4 6 8 10 11.522.533.5 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. FDJ1032C
typical characteristics : q2 0 1 2 3 4 5 00.511.522.5 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 3.2a v ds = 5v 15v 10v 0 50 100 150 200 250 300 0 5 10 15 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 17. gate charge characteristics. figure 18. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 100ms r ds(on) limit v gs = 4.5v single pulse r ja = 140 o c/w t a = 25 o c 10ms 1ms 1s 100s 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 140c/w t a = 25c figure 19. maximum safe operating ar ea. figure 20. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transien t thermal resistance r ja (t) = r(t) * r ja r ja = 140 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 21. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDJ1032C
dimensional outline and pad layout bottom view top view recommended landing pattern for standard dual configuration fdc6020c
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i14 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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